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TB62752BFUG.pdf

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  TB62752BFUG 2007-04-04 1  TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62752BFUG Step Up Type DC/DC Converter for White LED  The TB62752BFUG is a high efficient Step-Up Type DC/DC Converter specially designed for constant current driving of White LED.  This IC can drive 2-7 white LEDs connected series using a Li-ion battery.  This IC contains N-ch MOS-FET Transistor for Coil-Switching, and LED current (IF) is set with an external resistor.  This IC is especially for driving back light white LEDs in LCD of PDA, Cellular Phone, or Handy Terminal Equipment.  This device is Pb-free product. Features ã   2-7 white LEDs connected series. ã   Variable LED current IF is set with a external resistor: 20 mA (typ.) @RSENS =  15 Ω   ã   Output power: Available for 800 mW LED loading (7LEDs, I F   =  Over 25 mA) ã   High efficiency: 80% over (using recommended external parts) ã   Output over voltage shutdown function : Switching operation is shut downed when OVD terminal voltage is over 37 V (typ.). ã   IC package: SSOP6-P-0.95B ã   Switching frequency: 1.0 MHz (typ.) Pin Assignment (top view)   Note: This IC could be destroyed in some case if amounted in 180° inverse direction. Please be careful about IC direction in mounting. Weight: 0.016 g (typ.) 3 SHDN1OVDVINFB GND SW 6245  TB62752BFUG 2007-04-04 2 Block Diagram Pin Function Pin No. Symbol Function Description 1 SHDN Voltage-input terminal for IC-enable/disable LED-I F .  A high input on this pin enables the IC to operate while a low input causes it to shut down. The behavior of the IC is unpredictable if the input on the pin is undefined. Ensure that the pin is tied to either a high or low level. 2 OVD Over voltage detection terminal. IC switching operation is disabled with detection over voltage. If the voltage returns to detection level or less, operation is enabled again. 3 VIN Supply voltage input terminal. (2.8 V to 5.5 V) 4 SW Switch terminal for DC/DC converter. Nch MOSFET built-In. 5 GND Ground terminal. 6 FB LED I F  setting resistor connecting terminal. VIN SHDN Ramp generator Driver  VIN I sens  COMP ∑ 1.0 MHz oscillator R QSSW22 µ HShutdown function    C    1    2 .   2    µ    H GNDError  AMP.    C    2    1 .   0    µ    H  FB OVD Over voltage detection    3   0   0  m   V   1   5     Ω    @   2   0  m   A  TB62752BFUG 2007-04-04 3 I/O Equivalent Pin Circuits 1. SHDN Terminal 2. OVD Terminal 3. VIN   Terminal to GND Terminal 4. SW Terminal 5. FB Terminal 3 VIN5 GND1 VINSHDNOVD2FB6 VIN 4SW  TB62752BFUG 2007-04-04 4  Absolute Maximum Ratings (Ta 25°C if without notice)   Characteristics Symbol Rating Unit Power supply voltage VIN − 0.3 to + 6.0 V Input voltage )SHDN( VIN − 0.3 to +VIN +  0.3 (Note 1)V Switching terminal voltage V O  (SW) − 0.3 to +  40 V Switching terminal current I O  (SW) 1500 mA 0.41 (device) Power dissipation P D  0.47 (on PCB) (Note 2)W 300 (device) Thermal resistance R th (j-a)  260 (on PCB) °C/W Operation temperature range T opr    − 40 to +  85 °C Storage temperature range T stg   − 55 to +  150 °C Maximum junction temperature T  j  150 °C Note 1: Ensure that the supply voltage never exceeds 6.0 V. Note 2: Power dissipation must be calculated with subtraction of 3.8 mW/°C from maximum rating with every 1°C if T opr   is upper 25°C. (on PCB) Recommended Operating Condition (Ta 40 to 85°C if without notice)   Characteristics Symbol Tes CircuitTest Condition Min Typ. MaxUnitPower supply voltage VIN  ⎯ 2.8  ⎯ 5.5 V LED current I F    ⎯ VIN =  3.6 V, RSENS =  15 Ω  6 white LEDs, Ta =  25°C  ⎯ 20  ⎯ mA   Electrical Characteristics (Ta 25°C, VIN 2.8 to 5.5 V if without notice)   Characteristics Symbol Tes CircuitTest Condition Min Typ. MaxUnitPower supply voltage VIN  ⎯ 2.8  ⎯ 5.5 V Operating consumption current I IN (ON)  1 VIN =  3.6 V, RSENS =  15 Ω    ⎯ 0.6 0.9 mAQuiescent consumption current I IN (OFF)  2 VIN =  3.6 V, SHDN V =  0 V  ⎯ 0.5 1.0 µ  A SHDNterminal “H” level input voltage HSHDN V  3  ⎯ 1.3  ⎯ VINV SHDNterminal “L” level input voltage LSHDN V  3  ⎯ 0  ⎯ 0.4 V SHDNterminal current I_SHDN 4 VIN =  3.6 V, SHDN V =  3.6 V or 0 V  ⎯ 0 1.0 µ  A Integrated MOS-T r   switching frequency f  OSC  5 VIN =  3.6 V, SHDN V =  3.6 V 0.77 1.0 1.43MHzSwitching terminal leak current I oz  (SW) 6  ⎯ ⎯ 0.5 1 µ  A 7 VIN =  3.6 V, RSENS =  15 Ω  Ta =  25°C, L =  22 µ H 285 300 315mVFB terminal feedback voltage V FB  7 VIN =  4.2 V, RSENS =  150 Ω  Ta =  25°C, L =  22 µ H 285 300 315mVFB terminal line regulation ∆ V FB  7 VIN =  3.6 V (typ.) VIN =  3.0 to 5.0 V − 5  ⎯ 5 % FB terminal current I FB  8 VIN =  3.6 V, SHDN V =  3.6 V, V FB   =  300 mV  ⎯ 0.02  ⎯ µ  A OVD terminal detect voltage V OVD  9  ⎯ 29 31.5 34 V OVD terminal leakage current I OVD  10 V OVD   =  30 V  ⎯ 0.5 1 µ  A

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